中文

Journal Publications

[21]JKW Yang*, Y Yu, M Jalali, Safari Dinachali, RJH Ng, Liancheng Wang.Large Area Plasmonic Color Palettes with Expanded Gamut Using Colloidal Self-Assembly[J].ACS Photonics 3 (4), 627-633, 2016.
[22]G Wang, J Li, H Li, Y Zhang, X Yi, Z Liu, Liancheng Wang.Analysis of symmetry breaking configurations in metal nanocavities: Identification of resonances for generating high-order magnetic modes and multiple tunable magnetic-electric Fano resonances[J].J. Appl. Phys. 119 (17), 173106, 2016
[23]G Wang, J Li, J Wang, X Yi, YD Tian, ZH Zhang, Z Liu, Liancheng Wang*.Interface and photoluminescence characteristics of graphene-(GaN/InGaN)n multiple quantum wells hybrid structure[J].J. Appl.Phys.119(14), 143105, 2016.
[24]G. Wang, H. Zhu, X. Yi, Z. Liu, Y. Cheng, Liancheng Wang*.Hybrid tunnel junction-graphene transparent conductive electrodes for nitride lateral light Emitting Diodes[J].ACS Applied Materials & Interface, 2016, 8: 1176——1183.
[25]G. Wang, X. Yi, Z. Liu, E. Guo, Liancheng Wang*.High Performance Nitride Vertical Light Emitting Diodes based on Cu Electroplating Technical route[J].IEEE Transaction on Electron Devices, 63, 3, 2016.
[26]N. Wang, Z-H. Zhang, Liancheng Wang*.Current crowding phenomenon: Theoretical and direct correlation with the efficiency droop of light emitting diodes by a modified ABC model[J].IEEE J. Quantum Electronics, 51, 5(2015)
[27]H.V. Demir, H. Zhu*, X. Sun*, G. Wang*, X. Yi, S.T.Tan, Z-H. Zhang, Y. Zhang, W. Liu, Liancheng Wang.Graphene transparent conductive electrodes in GaN-based light emitting diodes: Challenges and Countermeasures[J].Nano Energy (2015) 12, 419–436.
[28]G. Wang, H. Zhu*, J. Wang, X. Yi, E. Guo, Z. Liu, X. Li, Y. Zhang, Liancheng Wang.Partially-sandwiched Multi-layer Graphene used as Transparent Conductive Layer for InGaN-based Vertical Light Emitting Diodes[J].Appl. Phys. Lett. 101, 061102 (2012).
[29]G. Wang, H. Zhu*, X. Yi*, Z. Liu, J. Ma, Liancheng Wang.In-situ fabrication of bendable hexagonal pyramids array vertical light emitting diodes with graphene as interconnected transparent conductive layer[J].ACS Photonics 2014, 1, 421？429
[30]G. Wang, X. Yi*, H. Yang, E. Guo, Z. Liu, Liancheng Wang*.Interface and transport properties of metallization contacts to wet etching roughed and un-roughed N-polar n-type GaN[J].ACS Applied Materials & Interfaces 2013, 5 (12)
[31]H. Zhu* G.Wang, J. Wang, X. Yi, E. Guo, Z. Liu, X. Li, Y. Zhang, Liancheng Wang.Interface and transport properties of GaN/graphene junction InGaN-based LEDs[J].J. Phys. D: Appl. Phys. 45 (2012) 505102.
[32]G. Wang, H. Zhu*, X. Yi*, Z. Liu, E. Guo, X. Li, Y. Zhang, Liancheng Wang.Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping[J].RSC Adv., 2013, 3, 3359. GaN/graphene Contact
[33]G. Wang, H. Zhu*, X. Yi*, Z. Liu, E. Guo, X. Li, Y. Zhang, Liancheng Wang.InGaN-based vertical light emitting diodes with HNO3 modified-graphene transparent conductive layer and high reflective membrane current blocking layer[J].Proc. R. Soc. A 469: 20120652 (2013).
[34]G.Wang, X. Yi*, H. Yang, H. Xie, H. Zheng, Y. Zhang, Z. Liu, Liancheng Wang*.Mechanism in Thermal Stress aided Electrodeless Etching of GaN Epitaxial on Sapphire and approaches to vertical devices[J].RSC Adv., 2013,3, 10934-10943
[35]G. Wang, X. Yi*, Z. Liu, J. Ma, Liancheng Wang*.N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array[J].J. Appl. Phys. 2013, 10, 114 (133101)
[36]G. Wang, X. Yi*, J. Wang, P. Ma, X. Ji, G. Yuan, Z. Liu, J. Ma (Joint first author), Liancheng Wang.Hexagonal Pyramids Array micro vertical Light Emitting Diodes by N-polar Wet Etching[J].Optics Express, 21, 3, 3457 (2013)
[37]G. Wang, J. Li, Z. Liu, X. Yi*, J. Guo, T. Zhan, Liancheng Wang*, T. Tian.Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA,>95%)[J].J. Phys. D Appl. Phys. 47 (2014)115102
[38]Wang Guohong, Yi Xiaoyan, Liu. Zhiqiang, G. Enqing, Liancheng Wang*.Electrical characteristics of vertical light emitting diode with n-type contact on a selectively wet-etching roughed surface[J].J. Semiconductors. vol.32, no.2 (2011)
[39]T.Wang, J.Bai, Liancheng Wang, Y.Zhang, Y. Gong, L.Jiu, B.Xu.Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire[J].AIP Advances, 7 (4), 045009, 2017
[40]G. Wang, J. Li, X. Yi, Z. Q. Liu, Z. Li, J. Kang, Z. H. Zhang, Liancheng Wang, H. Li*, P. Li.High efficiency and low droop of 400 nm InGaN near-ultraviolet light-emitting diodes through suppressed leakage current[J].IEEE J. Quantum Electronics 51, 9, 2015

total60 2/3

first previous next last Page

汪炼成

Email:

Central South University All rights reserved 湘ICP备05005659号-1

Click:

The Last Update Time:..