Journal Publications

• [1]Koji Ishibashi, Charles M. Lieber, Jun Yao, Rui Wang, Russell S. Deacon, Jian Sun*.Helical Hole State in Multiple Conduction Modes in Ge/Si Core/Shell Nanowire[J].Nano Letters, 2018
• [2]Hiroshi Mizuta, M. Manoharan, Jian Sun*, Zhongwang Wang.Electrically Tunable Localized States in Sub-band of Bilayer Graphene Nanoribbon,[J].Applied Physics Letters, 2018, 113 (13) : 133101.
• [3]H. Mizuta, N. Kanetake, M. Muruganathan, J. Sun*.Locally-Actuated Graphene-Based Nano-Electro-Mechanical Switch[J].Micromachines, 7 (7) : 124.
• [4]H. Mizuta, M. Muruganathan, J. Sun*.Room Temperature Detection of Individual Molecular Physisorption using Suspended Bilayer Graphene[J].Science Advances, 2 (4) : e1501518.
• [5]H. Mizuta, M. Muruganathan, H. Chong, M. E. Schmidt, J. Sun*.Large-Scale Nanoelectromechanical Switches Based on Directly Deposited Nanocrystalline Graphene on Insulating Substrates[J].Nanoscale, 8: 6659.
• [6]H. Mizuta, T. Imamura, J. Sun, M. Muruganathan.Electrically Tunable van der Waals Interaction in Graphene-Molecule Complex,.Nano Letters, 15 (8176)
• [7]H. Mizuta, M. Muruganathan, T. Iwasaki, J. Sun*.Lateral plasma etching enhanced on/off ratio in graphene nanoribbon field-effect transistor.Applied Physics Letters, 106: 033509.
• [8]H. Mizuta, M. Muruganathan, M. Akabori, T. Chikuba, N. Kanetake, J. Sun*, T. Iwasaki.Hydrogen Intercalation: An Approach to Eliminate Silicon Dioxide Substrate Doping to Graphene.Applied Physic Express, 8: 015101.
• [9]H. Mizuta, M. Muruganathan, W. Wang, J. Sun*.low pull-in voltage graphene electromechanical switch fabricated with a polymer sacrificial spacer.Applied physics Letters, 105: 033103.
• [10]J. Kosel, Y-A. Soh, J. Sun*.Geometric Factors in Magnetoresistance of n-doped InAs Epilayers.Journal of Applied Physics, 114: 203903.
• [11]J. Kosel, J. Sun*.A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epi-layer.IEEE Electron Device Letters, 34 (4) : 547.
• [12]J. Kosel, J. Sun*.Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrids: A Review[J].Materials, 6: 500.
• [13]J. Kosel, J. Sun*.The Influence of Semiconductor/Metal Interface Geometry in an EMR Sensor.IEEE Sensors Journal, 13 (2) : 664.
• [14]J. Kosel, J. Sun*.Hall Effect Enhanced Low-Field Sensitivity in a Three-contact Extraordinary Magnetoresistance Sensor.Applied Physics Letters, 100: 232407.
• [15]J. Kosel, S. Patil, Y-A. Soh, J. Sun*.Strong Temperature Dependence of Extraordinary Magnetoresistance Correlated to Mobility in a Two-contact Device.Applied Physics Express, 5: 033002.
• [16]and J. Kosel, C. Gooneratne, J. Sun*.Design Study of a Bar-type EMR Device, 12 (5) : 1356.
• [17]J. Kosel, J. Sun*.Room Temperature Inductively Coupled Plasma Etching of InAs/InSb in BCl3/Cl2/Ar.Microelectronic Engineering, 98: 222.
• [18]J. Kosel, J. Sun*.Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor.Journal of Superconductivity and Novel Magnetism, 25 (8) : 2749.