刘艳平

Yanping Liu*(刘艳平), Yuanji Gao, Siyu Zhang, Jun He, Juan Yu & Zongwen Liu.Valleytronics in transition metal dichalcogenides materials

发布时间：2020-04-05

点击次数：

影响因子：8.5

发表刊物：Nano Research

摘要：Valley degree of freedom in the first Brillouin zone of Bloch electrons offers an innovative approach to information storage and quantum computation. Broken inversion symmetry together with the presence of time-reversal symmetry endows Bloch electrons non-zero Berry curvature and orbital magnetic moment, which contribute to the valley Hall effect and optical selection rules in valleytronics. Furthermore, the emerging transition metal dichalcogenides (TMDs) materials naturally become the ideal candidates for valleytronics research attributable to their novel structural, photonic and electronic properties, especially the direct bandgap and broken inversion symmetry in the monolayer. However, the mechanism of inter-valley relaxation remains ambiguous and the complicated manipulation of valley predominantly incumbers the realization of valleytronic devices. In this review, we systematically demonstrate the fundamental properties and tuning strategies (optical, electrical, magnetic and mechanical tuning) of valley degree of freedom, summarize the recent progress of TMD-based valleytronic devices. We also highlight the conclusion of present challenges as well as the perspective on the further investigations in valleytronics.

备注：Valleytronics, Valley excitons, Transition metal dichalcogenides (TMDs), Valley Hall effect, Quantum devices

论文类型：期刊论文

文献类型：J

卷号：12

页面范围：2695–2711

是否译文：否

发表时间：2019-04-05

收录刊物：SCI

发布期刊链接：https://link.springer.com/article/10.1007/s12274-019-2497-2

附件：