Journal:Mater. Lett.

First Author:L. Zhang, H. Y. Xu, Z. Q. Wang, J. G. Ma and Y. C. Liu

Indexed by:Journal paper

Volume:154

Issue:98

Translation or Not:no

Included Journals:SCI

Pre One:Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM Next One:Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device