中南大学 zhanglei

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张磊

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[1]Improved resistive switching characteristics in？the？p+？Si/ZnO:Al/Ni heterojunction device
[2]Multilevel and Low-power Resistive Switching Based on pn Heterojunction memory
[3]Growth of continuous GaN films on ZnO buffer layer by chemical vapor deposition for ultraviolet photodetector
[4]Wide Waveband Light Detection and Storage Device for Visual Memory
[5]Electric-Controlled Resistive Switching and Different Synaptic Behaviors in p+-Si/n-ZnO Heterojunction Memristor.IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023
[6]p +-Si/n-ZnO/Ni Heterojunction Optoelectronic Synaptic Device for Visual Memory.IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023
[7]Memristive Characteristics of the Single-Layer P-Type CuAlO2 and N-Type ZnO Memristors.Materials, 2022, 15: 3637.
[8]Lei Zhang, Hao Yu, Cancheng Xiao, Jiawei Si, Haiyang Xu, Wenhui Zhu,* and Liancheng Wang*, Building Light Stimulated Synaptic Memory Devices for Visual Memory Simulation.Adv. Electron. Mater, 2020
[9]jiawei Si Lei Zhang, Influence of Al content on ZnO/Al bilayer-structure ultraviolet photodetector.Semiconductor Science and Technology
[10]Jiawei Si Lei zhang, Amorphous gallium oxide (a-Ga2O3)-based high-temperature bendable solar-blind ultraviolet photodetector.Semiconductor Science and Technology, 2021
[11]Wenhui Zhu, Jiawei Si, Lei Zhang, Tao Li, Wenqing Song, Yuting Zhou, Jiahao Yu, Rui Chen, Yexin Feng and Liancheng Wang, Growth of GaN on monolayer hexagonal boron nitride by chemical vapor deposition for ultraviolet photodetectors.Semiconductor Science and Technology, 2020, 35: 125025.
[12]Lei Zhang, Hao Yu, Lingxing Xiong, Jiawei Si, Liancheng Wang, and Wenhui Zhu, Flexible and thermally stable resistive switching memory in a Ta/TaO x/stainless steel structure.Semiconductor Science and Technology, 2020
[13]Wenhui Zhu, Lingxing Xiong, Jiawei Si, Zelin Hu, Xiang Gao, Linyun Long, Tao Li, Rongqiao Wan, Lei Zhang*, and Liancheng Wang*, Influence of Deposition Temperature on Amorphous Ga2O3 Solar-blind Ultraviolet Photodetector.Semiconductor Science and Technology, 2020, 35: 055037.
[14]Lei Zhang, Cheng Wu, Jun Liu, Xiaoning Zhao, Zhongqiang Wang, Haiyang Xu, Liancheng Wang, Yichun Liu, The nature of lithium-ion transport in low power consumption LiFePO4 resistive memory with graphite as electrode.physica status solidi (RRL) – Rapid Research Letters, 2018, 12 (1800320)
[15]Lei Zhang, Liancheng Wang, Xiaoning Zhao, Multilevel resistive switching in pn heterostructure memory.Journal of Nanoscience and Nanotechnology, 2019, 19 (130)
[16]Lei Zhang, Hao Yu, Lingxing Xiong, Wenhui Zhu, Liancheng Wang, The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device.Journal of Materials Science: Materials in Electronics, 2019, 30 (8629)
[17]L. Zhang, H. Y. Xu, Z. Q. Wang, W. Z. Liu, J. G. Ma, and Y. C. Liu, p-NiO/n+-Si single heterostructure for one diode-one resistor memory applications.Journal of Alloys and Compounds, 2017, 721 (520)
[18]L. Zhang, L. Zhu, X. M. Li, Z. Xu, W. L. Wang, and X. D. Bai, Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.Scientific Reports, 2017, 7 (45143)
[19]L. Zhang, H. Y. Xu, Z. Q. Wang, J. G. Ma and Y. C. Liu, Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory.Mater. Lett., 2015, 154 (98)
[20]L. Zhang, H. Y. Xu, Z. Q. Wang, H. Yu, X. N. Zhao, J. G. Ma, and Y. C. Liu, Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device.Applied Surface Science, 2016, 360 (338)

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