Language : English
张磊

Journal Publications

Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

Journal:Scientific Reports

First Author:L. Zhang, L. Zhu, X. M. Li, Z. Xu, W. L. Wang, and X. D. Bai

Indexed by:Journal paper

Volume:7

Issue:45143

Translation or Not:no

Included Journals:SCI