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孙健,男,中南大学物理与电子学院特聘教授,日本国立理化学研究所(RIKEN)访问科学家,IEEE高级会员,入选湖南省“百人计划”青年项目,湖湘高层次人才汇聚工程。2008年于上海交通大学获得机械电子专业工学学士。2013年毕业于沙特阿卜杜拉国王科技大学(KAUST),作为首届毕业生取得电子工程物理电子方向的博士学位。长期以来一直专注于新原理电子原型器件的开发工作,研究涉及微纳电子学、微纳加工技术、微纳机电系统、器件物理等。主持承担了国家自然科学基金、科技部重点研发项目、日本国家基金项目,日本国家重点基盘项目等国家级科研项目。在Science Advances,Nano Lett.,APL,ACS Nano,AM, AFM, IEEE EDL,IEEE sensors等国际知名期刊发表通讯作者论文40余篇,拥有2项美国专利。担任AAAS,AIP,IEEE,IOP,Wiley等学术出版机构的审稿专家,在IEEE sensors、Intermag等国际知名会议担任学术委员会成员以及分会主席等职务。 详情请登录课题组主页 https://www.x-mol.com/groups/jian_sun_csu
课题组长期招聘微纳电子器件、材料物理及相关领域的博士后研究人员,协助申请国家及湖南省博士后人才计划 详情请见:https://bsh.csu.edu.cn/info/1071/4169.htm Nano Electronics Lab English webpage, please visit: 详细论文列表请登录课题组中文网页 近期代表性论文 († 通讯作者)
(7) R. Wu, X. Liu, Z. Wang, Y. Jing, Y. Yuan, K. Tang, X. Dai, A. Qiu, H. N. Jaiswal, J. Sun, H. Li, and Jian Sun†, Excitation/inhibition balancing in 2D synaptic transistors with minority-carrier charge dynamics, IEEE Electron Device Letters, DOI: 10.1109/LED.2022.3224471 (2022) (6) Z. Wang, X. Liu, X. Zhou, Y. Yuan, K. Zhou, D. Zhang, H. Luo†, J. Sun†, Reconfigurable Quasi‐Nonvolatile Memory/ Subthermionic FET Functions in Ferroelectric–2D Semiconductor vdW Architectures, Advanced Materials, 2200032 (2022) (5) X. Liu, M.S. Choi, E. Hwang, W.J. Yoo†, J. Sun†, Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects, Advanced Materials, 2108425 (2021) (4) X. Liu, X. Zhou, Y. Pan, J. Yang, H. Xiang, Y. Yuan, S. Liu, H. Luo, D. Zhang†, J. Sun†, Charge-ferroelectric transition in ultrathin Na0.5Bi4.5Ti4O15 flake probed via dual-gated full van der Waals transistor, Advanced Materials, 32 (49), 2004813 (2020) (3) X. Liu, D. Qu, L. Wang, M. Huang, Y. Yuan, P. Chen, Y. Qu†, J. Sun†, W. J. Yoo†, Charge density depinning in defective MoTe2 transistor by oxygen intercalation, Advanced Functional Materials, 30(50), 202004880 (2020) (2) Z. Wang, Y.-H. Yuan, X. Liu, J. Sun†, M. Muruganathan, H. Mizuta, Quantum Dot Formation in Controllably Doped Graphene Nanoribbon, ACS Nano, 13(7), 7502-7507 (2019) (1) J. Sun†, R. S. Deacon, R. Wang, J. Yao, C. M. Lieber and K. Ishibashi, Helical Hole State in Multiple Conduction Modes in Ge/Si Core/Shell Nanowire, Nano Letters, 18 (10), 6144-6149 (2018)
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