InGaN-based vertical light emitting diodes with HNO3 modified-graphene transparent conductive layer and high reflective membrane current blocking layer

Pre One:N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array

Next One:Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA,>95%)