中文

Journal Publications

[1]Lei Zhang; Hao Yu; Lingxing Xiong; Wenhui Zhu; Liancheng Wang.The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device
[2]X. Y., Liancheng Wang, Y. Y. Zhang, Z. C. Li, Z. H. Zhang, C. J. Mao, H. J. Li, P. P. Li, Y. B. Zhao.Ultra-high efficient 527 nm InGaN green light-emitting diodes by MOCVD.Optics Express (Accepted)
[3]W. H. Zhu, Andrew A.O. Tay, Liancheng Wang, Z. Chen, J. H. Li, L. Shi, Z. Ding, G. Zheng, G. L. Li.High-performance ultra-low-k fluorine-doped nanoporous organosilica films for interlayer dielectric.Journal of Materials Science
[4]L, Wenhui Zhu, Lei Zhang, Jianchang Yan, Tao Li, Linyun Long, Rongqiao Wan, Zelin Hu, Linhao Guo.Design of Aluminum Nitride Metalens for Broadband Ultraviolet Incidence Routing[J].Nanophotonics
[5]*, Liancheng Wang, Li J M, Wang J X, Yi X Y, Liu Z Q, Li T, Wan R Q.Theoretical Analysis of Current diffusion and efficiency droop in vertical light emitting diodes.Chinese Physics B: 2018，1800320.
[6]Yich, *, Liancheng Wang, Haiyang Xu, * Zhongqiang Wang, Xiaoning Zhao, Jun Liu, Cheng Wu, Lei Zhang.The Nature of Lithium-Ion Transport in Low Power Consumption LiFePO4 Resistive Memory with Graphite as Electrode.Phys. Status Solidi RRL: 2018, 1800320.
[7]Liancheng Wang*, Wenhui Zhu, Junhui Li, Siyuan Xu, Lingxing Xiong, Tao Li, Linhao Guo, Rongqiao Wan.Theoretical Analysis of Lattice-Mediated Plasmon Resonance using Finite-difference Time-domain Method.J. Nanosci. Nanotechnol (Accepted)
[8]Xiaoning Zhao, Liancheng Wang*, Lei Zhang.Multilevel resistive switching in pn heterostructure memory.J. Nanosci. Nanotechnol (Accepted)
[9]J. X. Wang, G. D. Yuan, J. C. Yan, T. B. Wei, T. Li, X. X. Yi, Z. Q. Liu, Liancheng Wang, S. T. Wu.Horizontal GaN Nanowires Grown on Si (111) Substrate: the Effect of Catalyst Migration and Coalescence.Nanotechnology
[10]Y. Zhang, Y. Shi, J. M. Li, J. X. Wang, T. B. Wei, G. D. Yuan, Liancheng Wang*, X. Y. Yi, Z. Q. Liu.Impurity Resonant States p-doping layer for High Efficiency Nitride Based Light-Emitting Diodes.Semicond. Sci. Technol: 33 (2018) 114004.
[11]Liancheng Wang*, W. Zhu, L. Xiong, T. Li, R. Wan, S. Xu, L. Guo.Metalens at Ultraviolet Spectrum[J].Nanophoton, 12 (4) : 043513.
[12]W. H. Zhu, Liancheng Wang, Z. Chen, H. He, Y. Wang, H. Wu.Co-deposition of Nano-Size SiC Particles in Micro-Via
[13]and G. Wang, X. Yi, Liancheng Wang*, P. Li, L. Liu, H. Li, Y. Zhang.UV-C whispering-gallery modes in AlN microdisks withAlGaN-based multiple quantum wells on Si substrate[J].Nanophotonics, 12 (4) : 043502.
[14]J. M. Li, J. X. Wang, G. D.Yuan, T. B. Wei, Z. Q. Liu, X. Y. Yi, Liancheng Wang, S. T. Wu.Crystallographic orientation control and optical properties of GaN nanowires.RSC Adv., 2018，8: 2181-2187.
[15]J. M. Li, J. X. Wang, G. D.Yuan, T. B. Wei, Z. Q. Liu, X. Y. Yi, Liancheng Wang, S. T. Wu.Ultrafast Growth of Horizontal GaN Nanowires by HVPE through Flipping the Substrate,[J].Nanoscale. 2018. Accepted.
[16]J. M. Li, J. X. Wang, G. D.Yuan, T. B. Wei, Z. Q. Liu, X. Y. Yi, Liancheng Wang, S. T. Wu.Crystallographic orientation control and optical properties of GaN nanowires,[J].RSC Advances
[17]J. M. Li, J. X. Wang, G. D.Yuan, T. B. Wei, Z. Q. Liu, X. Y. Yi, Liancheng Wang, S. T. Wu.Influence of lateral growth on the optical properties of GaN nanowires grown by HVPE[J].J. Appl. Phys.122, 205302 (2017)
[18]G., J. X. Wang, H. J. Li, X. Y. Yi, Z. Li, J. Ma, Z. Q. Liu, R. Chen, Y. Y. Zhang, Liancheng Wang*.Optically-pumped lasing with Q-factor exceeding 6000 from Wet-etched GaN Micro pyramids[J].Opt. Lett., 2017, 42, 15, 2976
[19]J.Li, G.Wang, J.Wang, X.Yi, H.Li, Y.Zhang, Z.Liu, Z.Li, Liancheng Wang.Nanostructure Nitride Light Emitting Diodes via Talbot Effect using Improved Colloidal Photolithography[J].Nanoscale, 2017, 9, 7021
[20]G. Wang, X.Yi, H. Li, Liancheng Wang, A. Dehzangi, P. Li, Y. Y Zhang.Optically-pumped Single-mode Deep-ultraviolet Microdisk Lasers with AlGaN-based Multiple Quantum Wells on Si Substrate[J].IEEE Photonics Journal, Vol. 9, No. 5, October 20

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