Hexagonal Pyramids Array micro vertical Light Emitting Diodes by N-polar Wet Etching
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Pre One:N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array
Next One:Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA,>95%)
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