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High efficiency and low droop of 400 nm InGaN near-ultraviolet light-emitting diodes through suppressed leakage current

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  • Release time:2018-02-07

  • Journal:IEEE J. Quantum Electronics 51, 9, 2015

  • Co-author:G. Wang, J. Li, X. Yi, Z. Q. Liu, Z. Li, J. Kang, Z. H. Zhang, Liancheng Wang, H. Li*, P. Li

  • Document Type:J

  • Translation or Not:no

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