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InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition to suppress the Auger recombination

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  • Release time:2018-02-07

  • Journal:Appl. Phys. Lett. 105, 033506 (2014)

  • Co-author:H. V., *, X. Wei Sun, Liancheng Wang, X. Zhang, Z. Kyaw, Y. Ji, ST. Tan, Z. Ju, W. Liu, Z-H. Zhang

  • Document Type:J

  • Translation or Not:no

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