Release time:2018-11-07
Note:孙波;伊晓燕;刘志强;汪炼成;郭恩卿;王国宏,
Application Number:201110134149.5
Authorization number:CN102208340B
Service Invention or Not:no
Pre One:制作纳米级柱形阵列氮化镓基正装结构发光二极管的方法
Next One:氮化镓基垂直结构发光二极管隐形电极的制作方法
Email:79ee4cc7ad46f8cf2640b75f822c0497ef5dc19a5777c99e98ff12b8dd810250361f3687ca22f02bb38d2dd5a897ff1c4391d8cc6e1091c4ab896fcba790b503bee6b50bd7405ee7b0c0f1f3c8af31d7c0754359579c83015676fcf95ab8117e0724f8daabe140b641e3e78570d3b4a829e4580be0656c10b070cffefd48f1d3
The Last Update Time:..
MOBILE Version