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[21]栅极调制正装结构GaN基发光二极管的器件结构及制备方法, 授权号:CN102064260B.
[22]栅极调制垂直结构GaN基发光二极管的器件结构及制备方法, 授权号:CN102064261B.
[23]氮化镓基垂直结构发光二极管转移衬底的腐蚀方法, 申请号:201010251509.5, 授权号:CN101937951B.
[24]氮化镓基垂直结构发光二极管转移衬底的二次电镀方法, 申请号:201010251510.8,, 授权号:CN101974772B.

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