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Yanping LIU

Personal Information

Professor  
Supervisor of Doctorate Candidates  
Supervisor of Master's Candidates  

Main positions:1. Instructor of the "Talent Program" of the Chinese Ministry of Education and the China Association for Science and Technology2. Specially appointed expert of Hunan Overseas Chinese Federation3. "Optics" , editorial board4. Member of American Physical Society, American Society of Electrical and Electronics Engineers, American Chemical Society, Royal Society of Chemistry.

Journal Publications

Yanping Liu*(刘艳平), Yuanji Gao, Siyu Zhang, Jun He, Juan Yu & Zongwen Liu.Valleytronics in transition metal dichalcogenides materials

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Impact Factor:8.5

Journal:Nano Research

Abstract:Valley degree of freedom in the first Brillouin zone of Bloch electrons offers an innovative approach to information storage and quantum computation. Broken inversion symmetry together with the presence of time-reversal symmetry endows Bloch electrons non-zero Berry curvature and orbital magnetic moment, which contribute to the valley Hall effect and optical selection rules in valleytronics. Furthermore, the emerging transition metal dichalcogenides (TMDs) materials naturally become the ideal candidates for valleytronics research attributable to their novel structural, photonic and electronic properties, especially the direct bandgap and broken inversion symmetry in the monolayer. However, the mechanism of inter-valley relaxation remains ambiguous and the complicated manipulation of valley predominantly incumbers the realization of valleytronic devices. In this review, we systematically demonstrate the fundamental properties and tuning strategies (optical, electrical, magnetic and mechanical tuning) of valley degree of freedom, summarize the recent progress of TMD-based valleytronic devices. We also highlight the conclusion of present challenges as well as the perspective on the further investigations in valleytronics.

Note:Valleytronics, Valley excitons, Transition metal dichalcogenides (TMDs), Valley Hall effect, Quantum devices

Indexed by:Journal paper

Document Type:J

Volume:12

Page Number:2695–2711

Translation or Not:no

Date of Publication:2019-04-05

Included Journals:SCI

Links to published journals:https://link.springer.com/article/10.1007/s12274-019-2497-2

Attachments:

Pre One:Yanping Liu*(刘艳平); Cao L.K; Zhong J.H; He, J and Liu Z.W. Synthesis of bismuth selenide nanoplates by solvothermal methods and its stacking optical properties

Next One:Yanping Liu*(刘艳平); Idzuchi, H., Fukuma, Y., Rousseau, O., Otani, Y and Lew, W. S. Spin injection properties in trilayer graphene lateral spin valves.