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Yanping LIU

Personal Information

Professor  
Supervisor of Doctorate Candidates  
Supervisor of Master's Candidates  

Main positions:1. Instructor of the "Talent Program" of the Chinese Ministry of Education and the China Association for Science and Technology2. Specially appointed expert of Hunan Overseas Chinese Federation3. "Optics" , editorial board4. Member of American Physical Society, American Society of Electrical and Electronics Engineers, American Chemical Society, Royal Society of Chemistry.

Journal Publications

Yanping Liu*(刘艳平); Zeng, C.; Ding, J. N.; Zhong, J. H.; Gao, Y. J.; Kuang, X. F.; Yu, J.; Cao, L. K.; He, J.; Liu, Z. W. Effect of the Low-resistance Tunnel Barriers Induced Inhomogeneous Spin Current Distribution in Graphene Crossed Configuration Lateral Spin Valve

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DOI number:10.1063/1.5088200

Journal:AIP Advances

Key Words:Spin transport, spin injection, spin valve, spin-polarized current,tunnel barrier.

Abstract:The non-local spin valve (NLSV) configuration compose of two ferromagnetic (FM) and non-magnetic (NM) channels, which is an effective method for determining spin injection and accumulation. Here, we report that a reversed non-local spin signal was detected by changing the voltage probe configurations in graphene (Py/MgO/Graphene/MgO/Py) lateral spin valves. The abnormal reversed spin-dependent non-local voltage is attributed to the non-uniform pinhole at the interface of the low-resistance tunnel barrier, which yields the charge current to flow through the detection electrode and return to the graphene channel. We demonstrate that the channel-width induced spin-polarized current inhomogeneity that significantly contributes to non-local resistance. A detailed description and simulated results of the tunnel junctions provide evidence for the reversal of the Non-local voltage sign induced by the low-resistance tunnel barriers. Our work sheds light on the understanding of the spatial distribution of the spin current and the effect of the tunnel barrier, which are essential for the development of spintronic devices.

Indexed by:Journal paper

Document Type:J

Volume:9

Issue:11

Page Number:115005

Translation or Not:no

Date of Publication:2019-09-10

Included Journals:SCI

Links to published journals:https://aip.scitation.org/doi/pdf/10.1063/1.5088200

Attachments:

Pre One:. J. Yu; XF. Kuang; YJ. Gao; YP. Wang; KQ. Chen; Liu, Z. W., Yanping Liu*(刘艳平). Direct Observation of Linear Dichroism Transition in Two-dimensional Palladium Diselenide

Next One:Yanping Liu*(刘艳平); Zhang, S. Y.; He, J.; Wang, Z. M. M.; Liu, Z. W. Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials