Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Main positions:1. Instructor of the "Talent Program" of the Chinese Ministry of Education and the China Association for Science and Technology2. Specially appointed expert of Hunan Overseas Chinese Federation3. "Optics" ， editorial board4. Member of American Physical Society, American Society of Electrical and Electronics Engineers, American Chemical Society, Royal Society of Chemistry.
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Impact Factor:3.98
DOI number:10.1364/OE.392052
Journal:Optics Express
Key Words:Interlayer excitons, Coulomb interactions, van der Waals heterostructures ,transition metal dichalcogenides (TMDCs)
Abstract:Interlayer excitons (IX) are produced by the spatially separated electron-hole pairs due to the robust Coulomb interactions in van der Waals transition metal dichalcogenides (TMDCs) heterostructures (HSS). IX is characterized by larger binding energy, and its lifetime is orders of magnitude longer than that of the direct excitons, providing a significant platform for the manufacture of long-lived exciton devices and the exploration of exciton quantum gas. However, the studies are restricted to the single interlayer exciton, and the simultaneous capture and study of double IX remain challenging in the WSe2/WS2 HS. Here, we demonstrate the existence of double indirect IX in the WSe2/WS2 HS with the emission centers at 1.4585eV (~25.9meV wide) and 1.4885eV (~14.4meV wide) at cryogenic temperature, respectively. Interestingly, the intensities of the double IXS emission peaks are almost equal, and the energy difference between them is in a good agreement with the cleavage value of the WS2 conduction band (CB). Additionally, diverse types of excitons in the individual materials are successfully observed in the PL spectra at 8K. Such unique double IX features, in combination with excellent exciton identification, open up new opportunities for further investigations for new physical properties of TMDCs and explorations for the technological innovation of exciton devices.
Indexed by:Journal paper
Correspondence Author:J. Yu; XF. Kuang; YJ. Gao; YP. Wang; KQ. Chen; Liu, Z. W., Yanping Liu*(刘艳平).
Document Type:J
Volume:28
Issue:9
Page Number:13260-13268
Translation or Not:no
Date of Publication:2020-04-10
Included Journals:SCI
Links to published journals:https://www.osapublishing.org/oe/abstract.cfm?uri=oe-28-9-13260
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