中文

Ultra-high efficient 527 nm InGaN green light-emitting diodes by MOCVD

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  • Release time:2018-11-07

  • Journal:Optics Express (Accepted)

  • Co-author:X. Y., Liancheng Wang, Y. Y. Zhang, Z. C. Li, Z. H. Zhang, C. J. Mao, H. J. Li, P. P. Li, Y. B. Zhao

  • Translation or Not:no


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