中文

Journal Publications

[41]T. Wang, J. Bai, Yun Zhang, Liancheng Wang, Y. P. Gong, L Jiu, Z. Li.Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: simultaneous management of crystal quality improvement and cracking issue[J].Appl. Phys. Lett. 110, 082103 (2017).
[42]T., Robert W. Martin, J. Bai, Y.Zhang, Y. P. Gong, Jochen Bruckbauer, L Jiu, Liancheng Wang, Z. Li.Optical Investigation of Semi-polar (11-22) AlxGa1-xN with High Al Composition[J].Appl. Phys. Lett.110, 091102 (2017)
[43]JKW Yang et. al., Y Yu, Liancheng Wang, Mahsa Jalali.Generating colors from 3D plasmonic superlattice[J].Nanoscale, 8 (42), 18228-18234, 2016
[44]J. Li, G. Wang, J. Wang, X. Yi, Z. Liu, E. Guo, Liancheng Wang, T. Zhan, J. Ma, Q. Wang.Electroless Silver Plating Reflectors to Boost the Performance of Vertical Light-Emitting Diodes[J].IEEE Photonics Journal, 8, 4, 2016, 1601108
[45]G. Wang, X. Yi, J. Wang, P. Ma, X. Ji, G. Yuan, Z. Liu, Liancheng Wang (Joint first author), J. Ma.Hexagonal Pyramids Shaped GaN Light Emitting Diodes Array by N-polar Wet Etching[J].MRS Proceedings, Vol. 1538, 2013
[46]J. Li, G. Wang, X. Yi*, J. Ma, H. Zheng, Y. Zhang, Liancheng Wang, Y. Cheng.Enhanced Light Output Power of GaN-based Light Emitting Diodes with Micro-nano-patterned Sapphire Substrate[J].ECS Solid State Letters, 2 (11) Q93-Q97 (2013)
[47]J. Li, J. Wang, Q. Yan, C. Geng, Liancheng Wang, Y. Zhang, K.Wu, T. Wei*, H. Zheng, C. Du*.Photonic Crystal Light-Emitting Diodes with Nano-Pyramids Selectively Grown on p-GaN[J].Optics Express, 21, 21, 25373(2013).
[48]G. Wang, H. Zhu*, J. Li, N. Zhang, X. Yi, X. Li, Liancheng Wang, Y. Zhang.Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes[J].J. Appl. Phys., 2012, 111 (11): 114501.
[49]G. Wang, H. Zhu*, D. Wu, X. Yi, Liancheng Wang, X. Li, Y. Zhang.Enhanced light emission of GaN-based diodes with NiOx/graphene hybrid electrodes[J].Nanoscale, 2012, 4 (19): 5852-5855.
[50]J. Li, G. Wang, X. Yi*, Z. Liu, Liancheng Wang, J. Ma, Y. Cheng, E. Guo, H. Zheng, Y. Zhang.Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes[J].J. Appl. Phys.113,014502 (2013).
[51]J. Li, Y. Shi, G.Wang, J. Wang, Liancheng Wang, X.Yi, E. Guo, T. Wei, Z. Liu.Efficiency Droop in InGaN/GaN Multiple-quantum-well Blue Light-Emitting Diodes Grown on Free-standing GaN Substrate[J].Appl. Phys. Lett. 99, 091104 (2011)
[52]A. Melton, Ian T. Ferguson, J. Li, N. Lu, J. Wang, Liancheng Wang, E. Guo, X. Yi, J. Ma, Z. Liu.p-InGaN/AlGaN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes[J].Appl. Phys. Lett. 101, 261106 (2012)
[53]G. Wang, X. Yi, Liancheng Wang, X. Li, X. Lee, C. Du, Z. liu, J. Kang, Z. Li.Enhanced Performance of GaN-based Light-emitting Diodes with Graphene/Ag Nanowires Hybrid Films[J].AIP Advances, 3, 042134 (2013)
[54]G. Wang, H. Zhu*, X. Yi, X. Li, X. Lee, Liancheng Wang, Z. Liu*, J. Kang, Z. Li.The fabrication of GaN-based nanorods light-emitting diodes with multilayer graphene transparent electrodes[J].J. Appl. Phys. 113, 234302 (2013)
[55]H. V., *, X. Wei Sun, Liancheng Wang, X. Zhang, Z. Kyaw, Y. Ji, ST. Tan, Z. Ju, W. Liu, Z-H. Zhang.InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition to suppress the Auger recombination[J].Appl. Phys. Lett. 105, 033506 (2014)
[56]H. V., *, X. W. Sun, Liancheng Wang, X. Zhang, Zabu Kyaw, Y. Ji, ST. Tan, Z. Ju, W.Liu, Z-H. Zhang.Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers[J].Appl. Phys. Lett.104, 243501 (2014)
[57]H. V, *, X. W. Sun, Liancheng Wang, X. Zhang, Zabu Kyaw, Y. Ji, ST. Tan, Z. Ju, W. Liu, Z-H. Zhang.Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency[J].Appl. Phys. Lett. 104, 251108 (2014)
[58]X, N. Hasanov, X. Zhang, S. Lu, Y. Zhang, B. Zhu, Liancheng Wang, Y. Ji, ST. Tan, W. Liu, Z-H. Zhang.A hole accelerator for InGaN/GaN light-emitting diodes[J].Appl. Phys. Lett. 105, 153503 (2014)
[59]H. V. Demir, X.W. Sun, ST. Tan, Liancheng Wang, Y. Ji, W. Liu, Z. Kyaw, Z-H. Zhang.A hole modulator for InGaN/GaN light-emitting diodes[J].Appl. Phys. Lett. 106, 063501 (2015)
[60]N. Hasa, Z. Kyaw, Liancheng Wang, Y. Ji, X. Zhang, Z. G. Ju, ST. Tan, W.Liu, Z-H. Zhang, Y. P. Zhang.Nonradiative recombination-critical in choosing quantum well number for InGaN/GaN light-emitting diodes[J].Optics Express23 (3), A34-A42,2015

total60 3/3

first previousnextlast Page

汪炼成

Email:

Central South University All rights reserved 湘ICP备05005659号-1

Click:

The Last Update Time:..